JPS5069974A - - Google Patents

Info

Publication number
JPS5069974A
JPS5069974A JP48106998A JP10699873A JPS5069974A JP S5069974 A JPS5069974 A JP S5069974A JP 48106998 A JP48106998 A JP 48106998A JP 10699873 A JP10699873 A JP 10699873A JP S5069974 A JPS5069974 A JP S5069974A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48106998A
Other languages
Japanese (ja)
Other versions
JPS5132543B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48106998A priority Critical patent/JPS5132543B2/ja
Publication of JPS5069974A publication Critical patent/JPS5069974A/ja
Publication of JPS5132543B2 publication Critical patent/JPS5132543B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP48106998A 1973-09-25 1973-09-25 Expired JPS5132543B2 (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48106998A JPS5132543B2 (en]) 1973-09-25 1973-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48106998A JPS5132543B2 (en]) 1973-09-25 1973-09-25

Publications (2)

Publication Number Publication Date
JPS5069974A true JPS5069974A (en]) 1975-06-11
JPS5132543B2 JPS5132543B2 (en]) 1976-09-13

Family

ID=14447874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48106998A Expired JPS5132543B2 (en]) 1973-09-25 1973-09-25

Country Status (1)

Country Link
JP (1) JPS5132543B2 (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en]) * 1974-01-11 1975-08-22
JPS55132964U (en]) * 1979-03-14 1980-09-20
JPS6459873A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en]) * 1974-01-11 1975-08-22
JPS55132964U (en]) * 1979-03-14 1980-09-20
JPS6459873A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5132543B2 (en]) 1976-09-13

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